| PART |
Description |
Maker |
| NTMFS08N004C |
N-Channel Shielded Gate PowerTrench MOSFET
|
ON Semiconductor
|
| FDMS86252L |
150V N-Channel Shielded Gate PowerTrenchMOSFET
|
Fairchild Semiconductor
|
| FDB86135 |
N-Channel Shielded Gate PowerTrench? MOSFET
|
Fairchild Semiconductor
|
| FDD86326 |
N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m Ohm
|
Fairchild Semiconductor
|
| SRR1280-391K SRR1280-102K SRR1280-2R4Y |
SMD SHIELDED POWER CHOKE-LEAD FREE 1 ELEMENT, 390 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
SMD SHIELDED POWER CHOKE-LEAD FREE 1 ELEMENT, 1000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
CHOKE, POWER, SHIELDED, 2.5UH; Inductor type:Shielded Power Choke; Inductance:2.5uH; Tolerance, inductance: /-30%; Resistance:10mR; Current, DC max:9.2A; Frequency, resonant:45.0MHz; Case style:SMD Shielded; Q factor:20; Material, RoHS Compliant: Yes
|
Bourns, Inc.
BOURNS INC
|
| STY25NA60 6064 |
N - CHANNEL 600V - 0.225W - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET
N - CHANNEL 600V - 0.225ohm - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET
From old datasheet system
N - CHANNEL 600V - 0.225 - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET
N-CHANNEL Power MOSFET
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| STS8DNF3LL |
DUAL N-CHANNEL 30V - 0.017 OHM - 8A SO-8 LOW GATE CHARGE STRIPFET II POWER MOSFET
DUAL N-CHANNEL 30V - 0.017 ohm - 8A SO-8 LOW GATE CHARGE STripFET II POWER MOSFET
DUAL N-CHANNEL 30V - 0.017 ohm - 8A SO-8 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
DUAL N-CHANNEL 30V - 0.017 ohm - 8A SO-8 LOW GATE CHARGE STripFETII POWER MOSFET 双N沟道30V 0.017欧姆- 8A条的SO - 8低栅极电荷STripFET⑩二功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| STW80NF10 7305 |
N-CHANNEL 100V - 0.012ohm - 80A TO-247 LOW GATE CHARGE STripFETPOWER MOSFET N沟道100V 0.012ohm - 80A 247低栅极电荷STripFET⑩功率MOSFET
N-CHANNEL 100V - 0.012ohm - 80A TO-247 LOW GATE CHARGE STripFET POWER MOSFET
N-CHANNEL 100V 0.012 OHM 80A TO-247 LOW GATE CHARGE STRIPFET POWER MOSFET
From old datasheet system
N-CHANNEL 100V - 0.012ohm - 80A TO-247 LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 100V 0.012 OHM 80A TO-247 LOW GATE CHARGE STRIPFET POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STD10NF10 |
N-CHANNEL POWER MOSFET
N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET
|
ST Microelectronics
STMicroelectronics
|
| XAL1060-472ME XAL1060-122ME XAL1060-181ME XAL1060- |
High Temperature Shielded Power Inductors
Shielded Power Inductors ?XAL1060
|
Coilcraft lnc.
|
| AP9928GEM |
7.3 A, 20 V, 0.023 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Capable of 2.5V gate drive, Surface mount package
|
Advanced Power Electronics Corp.
|
